View TISP4115H3_8138364.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxh3lm overvoltage protector series tisp4070h3lm thru TISP4115H3lm, tisp4125h3lm thru tisp4220h3lm, tisp4240h3lm thru tisp4400h3lm bidirectional thyristor overvoltage protectors summary current ratings tisp4xxxh3lm overview summary electrical characteristics part # v drm v v (bo) v v t @ i t v i drm a i (bo) ma i t a i h ma c o @ -2 v pf functionally replaces tisp4070h3 58 70 3 5 600 5 150 120 p0640ec tisp4080h3 65 80 3 5 600 5 150 120 p0720ec tisp4095h3 75 95 3 5 600 5 150 120 p0900ec TISP4115H3 90 115 3 5 600 5 150 120 p1100ec tisp4125h3 100 125 3 5 600 5 150 65 tisp4145h3 120 145 3 5 600 5 150 65 p1300ec tisp4165h3 135 165 3 5 600 5 150 65 tisp4180h3 145 180 3 5 600 5 150 65 p1500ec tisp4220h3 160 220 3 5 600 5 150 65 p1800ec tisp4240h3 180 240 3 5 600 5 150 55 tisp4250h3 190 250 3 5 600 5 150 55 p2300ec tisp4260h3 200 260 3 5 600 5 150 55 tisp4290h3 220 290 3 5 600 5 150 55 p2600ec tisp4300h3 230 300 3 5 600 5 150 55 tisp4350h3 275 350 3 5 600 5 150 55 p3100ec tisp4395h3 320 395 3 5 600 5 150 55 p3500ec tisp4400h3 300 400 3 5 600 5 150 55 b ourns part has an improved protection voltage this tisp device series protects central office, access and customer premise equipment against overvoltages on the telecom line. the tisp4xxxh3lm is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. these protectors have been specified mindful of the following standards and recommendations: gr-1089-core, fcc part 68, ul1950, en 60 950, iec 60950, itu-t k.20, k.21 and k.45. the tisp4350h3lm meets the fcc part 68 ??ringer voltage requirement and survives the ty pe a and b impulse tests. these devices are housed in a through-hole do-92 package (to-92 package with cropped center leg). parameter i tsp a i tsm a di/dt a/ s waveshape 2/10 1.2/50, 8/20 10/160 5/320 10/560 10/1000 1 cycle 60 hz 2/10 wavefront value 500 300 250 200 160 100 60 400 *rohs directive 2002/95/ec jan 27 2003 including annex *r o h s c o m p l i a n t v e r s i o n s a v a i l a b l e
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. lmf package (lm package with formed leads) (top view) how to order lm package (top view) ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge rated for international surge wave shapes device symbol description tisp4xxxh3lm overvoltage protector series low differential capacitance ...................................80 pf max. itu-t k.20/21 rating...........................8 kv 10/700, 200 a 5/310 these devices are designed to limit overvoltages on the telephone line. overvoltages are normally caused by a.c. power system o r lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the ring and tip wires for telephones and modems). combi nations of devices can be used for multi-point protection (e.g. 3-point protection between ring, tip and ground). the protector consists of a symmetrical voltage-triggered bidirectional thyristor. overvoltages are initially clipped by breakd own clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on s tate causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current prevents d.c. latchup as the diverted current subsides. .............................................. ul recognized component device v drm v v (bo) v ?4070 58 70 ?4080 65 80 ?4095 75 95 ?4115 90 115 ?4125 100 125 ?4145 120 145 ?4165 135 165 ?4180 145 180 ?4220 160 220 ?4240 180 240 ?4250 190 250 ?4260 200 260 ?4290 220 290 ?4300 230 300 ?4350 275 350 ?4395 320 395 ?4400 300 400 waveshape standard i tsp a 2/10 s gr-1089-core 500 8/20 s iec 61000-4-5 300 10/160 s fcc part 68 250 10/700 s itu-t k.20/21 200 10/560 s fcc part 68 160 10/1000 s gr-1089-core 100 nc - no internal connection on pin 2 nc t(a) r(b) md4xat 1 2 3 nc - no internal connection on pin 2 nc t(a) r(b) md4xakb 1 2 3 t r sd4xaa terminals t and r correspond to the alternative line designators of a and b device package carrier tisp4xxxh3lm straight lead do-92 (lm) bulk pack tisp4xxxh3lm tape and reeled tisp4xxxh3lmr formed lead do-92 (lmf) tape and reeled tisp4xxxh3lmfr tisp4xxxh3lm-s tisp4xxxh3lmr-s tisp4xxxh3lmfrs insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc. for standard termination finish order as for lead free termination finish order as
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. description (continued) tisp4xxxh3lm overvoltage protector series rating sy m bol value unit re petitive peak off-state voltage, (see note 1) 4070 4080 4095 4115 4125 4145 4165 4180 4220 4240 4250 4260 4290 4300 4350 4395 4400 v drm 58 65 75 90 100 120 135 145 160 180 190 200 220 230 275 320 300 v non-repetitive peak on-state pulse current (see notes 2, 3 and 4) i tsp a 2/10 s( gr -1089-core, 2/10 s voltage wave shape) 500 8/20 s( ie c 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 300 10/160 s(f cc part 68, 10/160 s voltage wave shape) 250 5/200 s( vde 0433, 10/700 s voltage wave shape) 220 0.2/310 s (i 31-24, 0.5/700 s vo lt ag e wa ve shape) 200 5/310 s( i tu-t k20/21, 10/700 s voltage wave shape) 200 5/310 s( f tz r12, 10/700 s voltage wave shape) 200 5/320 s(f cc part 68, 9/720 s voltage wave shape) 200 10/560 s(f cc part 68, 10/560 s voltage wave shape) 160 10/1000 s( gr -1089-core, 10/1000 s voltage wave shape) 100 non-repetitive peak on-state current (see notes 2, 3 and 5) i tsm 55 60 2.3 a 20 ms (50 hz) full sine wave 16.7 ms (60 hz) full sine wave 1000 s 50 hz/60 hz a.c. initial rate of rise of on-state current, exponential current ramp, maximum ramp value < 100 a di t /dt 400 a/ s j unction temperature t j -40 to +150 c st or age temperature range t stg -65 to +150 c notes: 1. see applications information and figure 10 for voltage values at lower temperatures. 2. initially, the tisp4xxxh3lm must be in thermal equilibrium with t j =25 c. 3. the surge may be repeated after the tisp4xxxh3lm returns to its initial conditions. 4. see applications information and figure 11 for current ratings at other temperatures. 5. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. see figure 8 for the current ratings at other durations. derate current values at -0.61 %/ c for ambient temperatures above 25 c. absolute maximum ratings, t a = 25 c (unless otherwise noted) this tisp4xxxh3lm range consists of seventeen voltage variants to meet various maximum system voltage levels (58 v to 320 v). t hey are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. these protection device s are supplied in a do-92 (lm) cylindrical plastic package. the tisp4xxxh3lm is a straight lead do-92 supplied in bulk pack and on tape and reel. t he tisp4xxxh3lmf is a formed lead do-92 supplied only on tape and reel. for lower rated impulse currents in the do-92 package, the 50 a 10/ 1000 tisp4xxxm3lm series is available.
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. pa rameter test conditions min typ max unit i drm repetitive peak off- st ate current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) breakove r voltage dv/dt = 750 v/ms, r sour ce = 300 ? 4070 4080 4095 4115 4125 4145 4165 4180 4220 4240 4250 4260 4290 4300 4350 4395 4400 70 80 95 115 125 145 165 180 220 240 250 260 290 300 350 395 400 v v (bo) impuls e breakover voltage dv/dt 1000v/ s, linear voltage ramp, maximum ramp value = 500 v di/dt = 20 a/ s, linear current ramp, maximum ramp value = 10 a 4070 4080 4095 4115 4125 4145 4165 4180 4220 4240 4250 4260 4290 4300 4350 4395 4400 78 88 103 124 134 154 174 189 230 250 261 271 301 311 362 408 413 v i (bo) breakover current dv/dt = 750 v/ms, r sour ce = 300 ? 0.15 0.6 a v t on-state voltage i t = 5a, t w = 100 s 3v i h hold ing current i t = 5a, di/dt=-/+30ma/ms 0.15 0.6 a dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 0.85v drm 5kv/ s i d off-state current v d = 50 v t a = 85 c 10 a electrical characteristics t a = 25 c (unless otherwise noted) tisp4xxxh3lm overvoltage protector series
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. parameter t est conditions min typ max unit r ja j unction to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(10 00) , t a = 25 c, (see note 7) 105 c/w 265 mm x 210 mm populated line card, 4-layer pcb, i t = i tsm(1000) , t a = 25 c 55 note 7: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths. thermal characteristics electrical characteristics t a = 25 c (unless otherwise noted) (continued) c off off-state capacitance f= 100 khz, v d =1v rms, v d =0, f= 100 khz, v d =1v rms, v d =-1v f= 100 khz, v d =1v rms, v d =-2v f= 100 khz, v d =1v rms, v d =-50v f= 100 khz, v d =1v rms, v d =- 100 v (see note 6) 4070 thru ?115 4125 thru ?220 4240 thru ?400 4070 thru ?115 4125 thru ?220 4240 thru ?400 4070 thru ?115 4125 thru ?220 4240 thru ?400 4070 thru ?115 4125 thru ?220 4240 thru ?400 4125 thru ?220 4240 thru ?400 172 95 92 157 85 80 145 78 72 70 33 28 25 22 218 120 115 200 110 100 185 100 90 90 43 35 33 28 pf note 6: to avoid possible voltage clipping, the 4125 is tested with v d =-98v. parameter test conditions min typ max unit tisp4xxxh3lm overvoltage protector series
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. parameter measurement information tisp4xxxh3lm overvoltage protector series figure 1. voltage-current characteristic for t and r terminals all measurements are referenced to the r terminal -v v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i switching char acteristic +v +i v (bo) i (bo) v d i d i h i t v t i tsm i tsp -i quadra nt iii switching char acteristic pmxxaab v drm i drm
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. t ypical characteristics tisp4xxxh3lm overvoltage protector series figure 2. figure 3. figure 4. figure 5. t j - junction temperature - c -25 0 25 50 75 100 125 150 |i d | - off-state current - a 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 t chas v d = 50 v t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakover voltage 0.95 1.00 1.05 1.10 tc4haf v t - on-s tate volt age - v 0.7 1.5 2 3 4 5 7 110 i t - on-s tate curr ent - a 1.5 2 3 4 5 7 15 20 30 40 50 70 150 200 1 10 100 t a = 25 c t w = 100 s tc4hacb ' 4240 t hru ' 4400 ' 4070 t hru ' 4115 ' 4125 t hru ' 4220 t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4had off-state current vs junction temperature on-state current vs on-state voltage normalized breakover voltage vs junction temperature normalized holding current vs junction temperature
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. t ypical characteristics figure 6. figure 7. v d - off-state voltage - v 0.5 1 2 3 5 10 20 30 50 100150 capacitance normalized to v d = 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t j = 25 c v d = 1 vrms tc4haqa ' 4125 t hru ' 4220 ' 4240 t hru ' 4400 ' 4070 t hru ' 4115 v drm - re petitive peak off-state voltage - v 50 60 70 80 90 150 200 250 300 100 ? c - differential off-state capacitance - pf 40 45 50 55 60 65 70 75 80 85 90 ? c = c off (-2 v) - c off(-50 v) t chatb ' 4070 ' 4080 ' 4095 ' 4125 ' 4145 ' 4165 ' 4180 ' 4260 ' 4300 ' 4350 ' 4400 ' 4240 ' 4115 ' 4220 ' 4250 ' 4290 ' 4395 normalized capacitance vs off-state voltage differential off-state capacitance vs rated repetitive peak off-state voltage tisp4xxxh3lm overvoltage protector series
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. rating and thermal information tisp4xxxh3lm overvoltage protector series figure 8. figure 9. figure 10. figure 11. t - current duration - s 01 1 10 100 1000 i tsm (t) - n on-repetitive peak on-state current - a 1.5 2 3 4 5 6 7 8 9 15 20 30 10 v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c t - power duration - s 01 1 10 100 1000 z ja(t) - transient thermal impedance - c/w 2 3 4 5 6 8 15 20 30 40 50 60 80 150 10 100 ti4hag i tsm (t) applied for time t eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c t amin - mi ni mum ambient temperature - c -35 -25 -1 5-5 5 15 25 -40 -30 -20 -10 0 10 20 derating factor 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 ti4haia ' 4240 thru '4440 ' 4125 thru '4220 ' 4070 thru '4115 t a - ambient temperature - c -40 -30 -20 -10 0 10 2 0304050607080 impulse current - a 90 100 120 150 200 250 300 400 500 600 700 iec 1. 2/50, 8/20 itu-t 10/700 fcc 10/560 bellcore 2/10 bellcore 10/1000 fcc 10/160 tc4haa non-repetitive peak on-state current vs current duration v drm derating factor vs minimum ambient temperature thermal impedance vs power duration impulse rating vs ambient temperature
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. deployment tisp4xxxh3lm overvoltage protector series applications information these devices are two terminal overvoltage protectors. they may be used either singly to limit the voltage between two conducto rs (figure 12) or in multiples to limit the voltage at several points in a circuit (figure 13). in figure 12, protector th1 limits the maximum voltage between the two conductors to v (bo) . this configuration is normally used to protect circuits without a ground reference, such as modems. in figure 13, protectors th2 and th3 limit the maximum voltage between eac h conduc- tor and ground to the v (bo) of the individual protector. protector th1 limits the maximum voltage between the two conductors to its v (bo) value. if the equipment being protected has all its vulnerable components connected between the conductors and ground, then pro tector th1 is not required. impulse testing to verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various imp ulse wave forms. the table below shows some common values. if the impulse generator current exceeds the protectors current rating, then a series resistance can be used to reduce the cur r ent to the protectors rated value to prevent possible failure. the required value of series resistance for a given waveform is given by t he following calculations. first, the minimum total circuit impedance is found by dividing the impulse generators peak voltage by the prote ctors rated current. the impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then sub tracted from the minimum total circuit impedance to give the required value of series resistance. in some cases, the equipment will require veri fication over a temperature range. by using the rated waveform values from figure 11, the appropriate series resistor value can be calculated f or ambient temperatures in the range of -40 c to 85 c. ac power testing the protector can withstand currents applied for times not exceeding those shown in figure 8. currents that exceed these times must be terminated or reduced to avoid protector failure. fuses, ptc (positive temperature coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. protective fuses may range from a few hundred milliamperes to one ampere. in some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. the current versus time characteristic of the overcurrent protector must be below the line shown in figure 8. in some cases, there may be a furthe r time limit imposed by the test standard (e.g. ul 1459 wiring simulator failure). fi gure 12. two point protection figure 13. multi-point protection th1 th3 th2 th1 standard peak voltage setting v volt age waveform s peak current value a current waveform s tisp4xxxh3 25 c rating a series resistance ? gr -1089-core 2500 2/10 500 2/10 500 0 1000 10/1000 100 10/1000 100 fcc part 68 (march 1998) 1500 10/160 200 10/160 250 0 800 10/560 100 10/560 160 0 1500 9/720 ? 37.5 5/320 ? 200 0 1000 9/720 ? 25 5/320 ? 200 0 i3124 1500 0.5/700 37.5 0.2/310 200 0 itu-t k.20/k 21 1500 4000 10/700 37.5 100 5/310 200 0 ? fcc part 68 terminology for the waveforms produced by the itu-t recommendation k.21 10/700 impulse generator
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. capacitance tisp4xxxh3lm overvoltage protector series applications information the protector characteristic off-state capacitance values are given for d.c. bias voltage, v d , values of 0, -1 v, -2 v and -50 v. where possible, values are also given for -100 v. values for other voltages may be calculated by multiplying the v d = 0 capacitance value by the factor given in figure 6. up to 10 mhz, the capacitance is essentially independent of frequency. above 10 mhz, the effective capacitance is str ongly dependent on connection inductance. in many applications, such as figure 15 and figure 17, the typical conductor bias voltages will be about -2 v and -50 v. figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 v and the ot her at -50 v. normal system voltage levels the protector should not clip or limit the voltages that occur in normal system operation. for unusual conditions, such as ring ing without the line connected, some degree of clipping is permissible. under this condition, about 10 v of clipping is normally possible witho ut activating the ring trip circuit. figure 10 allows the calculation of the protector v drm value at temperatures below 25 c. the calculated value should not be less than the maximum normal system voltages. the tisp4260h3lm, with a v drm of 200 v, can be used for the protection of ring generators producing 100 v rms of ring on a battery voltage of -58 v (th2 and th3 in figure 17). the peak ring voltage will be 58 + 1.414*100 = 199. 4 v. however, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. in the extreme case of an unconnected line, clipping the peak voltage to 190 v should not activate the ring trip. this level of clipping would occur at t he temperature when the v drm has reduced to 190/200 = 0.95 of its 25 c value. figure 10 shows that this condition will occur at an ambient temperature of -22 c. in this example, the tisp4260h3lm will allow normal equipment operation provided that the minimum expected ambient temperature does not fall below -22 c. jesd51 thermal measurement method to standardize thermal measurements, the eia (electronic industries alliance) has created the jesd51 standard. part 2 of the st andard (jesd51-2, 1995) describes the test environment. this is a 0.0283 m 3 (1 ft 3 ) cube which contains the test pcb (printed circuit board) horizontally mounted at the center. part 3 of the standard (jesd51-3, 1996) defines two test pcbs for surface mount components; one for packages smaller than 27 mm (1.06 ? on a side and the other for packages up to 48 mm (1.89 ?. the lm package measurements u sed the smaller 76.2 mm x 114.3 mm (3.0 x 4.5 ? pcb. the jesd51-3 pcbs are designed to have low effective thermal conductivity (hi gh thermal r esistance) and represent a worse case condition. the pcbs used in the majority of applications will achieve lower values of th ermal resistance and so can dissipate higher power levels than indicated by the jesd51 values.
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxh3lm overvoltage protector series t ypical circuits figure 14. modem in ter-wire protection figure 15. protection module fi gure 16. isdn protection figure 17. line card ring/test protection fuse tisp 4350 or tisp 4400 ai6xbm ring detector hook switch d.c. sink si gnal modem ring wire tip wire r1a r1b ring wire tip wire th3 th2 th1 protected equipment e. g. line card ai6xbk r1a r1b th3 th2 th1 ai6xbl si gnal d.c. test relay ring relay slic relay test equip- ment ring generator s1a s1b r1a r1b ring wire tip wire th3 th2 th1 th4 th5 slic slic protection ring/test protection o ver- current protection s2a s2b s3a s3b v bat c1 220 nf ai6xbj tisp6x xxx, tisppblx, 1/2tisp6ntp2
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. device symbolization code device symbolization code tisp4070h3lm 4070h3 tisp4080h3lm 4080h3 tisp4095h3lm 4095h3 TISP4115H3lm 4115h3 tisp4125h3lm 4125h3 tisp4145h3lm 4145h3 tisp4165h3lm 4165h3 tisp4180h3lm 4180h3 tisp4220h3lm 4220h3 tisp4240h3lm 4240h3 tisp4250h3lm 4250h3 tisp4260h3lm 4260h3 tisp4290h3lm 4290h3 tisp4300h3lm 4300h3 tisp4350h3lm 4350h3 tisp4395h3lm 4395h3 tisp4400h3lm 4400h3 mechanical data carrier information tisp4xxxh3lm overvoltage protector series devices will be coded as below. devices are shipped in one of the carriers below. a reel contains 2,000 devices. package type carrier straight lead do-92 bulk pack tisp4xxxh3lm straight lead do-92 tape and reeled tisp4xxxh3lmr formed lead do-92 tape and reeled tisp4xxxh3lmfr tisp4xxxh3lm-s tisp4xxxh3lmr-s tisp4xxxh3lmfrs for standard termination finish order as for lead free termination finish order as
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. lm002 (do-92) 2-pin cylindrical plastic package mechanical data lm00 2 package (do-92) md4xara 1 3 2 a 3 1 2 view a dimensions are: metric (inches) 4.44 - 5.21 (.175 - .205) 3.43 (.135) 4.32 - 5.34 (.170 - .210) 3.17 - 4.19 (.125 - .165) 2.03 - 2.67 (.080 - .105) 0.40 - 0.56 (.016 - .022) 0.35 - 0.41 (.014 - .016) min. 2.20 (.086) max. 12.7 (0.5) min. 1.14 - 1.40 (.045 - .055) 2.41 - 2.67 (.095 - .105) 2.03 - 2.67 (.080 - .105) this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compo und will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated i n high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly. tisp4xxxh3lm overvoltage protector series
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. lm002 (do-92) - formed leads version 2-pin cylindrical plastic package mechanical data lmf002 (do-92) - formed leads version of lm002 md4x asa a view a 3 1 2 1 3 2 dimensions are: metric (inches) 4.44 - 5.21 (.175 - .205) 3.43 (.135) 4.32 - 5.34 (.170 - .210) 3.17 - 4.19 (.125 - .165) 2.03 - 2.67 (.080 - .105) 2.03 - 2.67 (.080 - .105) 0.40 - 0.56 (.016 - .022) 0.35 - 0.41 (.014 - .016) min. 2.20 (.086) max. 4.00 (.157) max. 2.40 - 2.90 (.094 - .114) 2.40 - 2.90 (.094 - .114) this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compo und will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated i n high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly. tisp4xxxh3lm overvoltage protector series
november 1997 - revised february 2005 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. t ape dimensions mechanical data lmf002 package (formed lead do-92) tape lmf002 tape dimensions conform to the requirements of eia-468-b md4xaqc adhe sive tape on reverse side - shown dashed body i ndent visible view a tape section shown in view a flat of do-92 body towa rds reel axis direct i on of feed dimensions are: metric (inches) 4.88 - 5.28 (.192 - .208) 3.70 - 4.30 (.146 - .169) 23.00 - 32.00 (.906 - 1.260) 2.50 (.098) 3.41 - 4.21 (.134 - .166) 12.40 - 13.00 (.488 - .512) 11.70 - 13.70 (.461 - .539) ? min. 17.66 - 27.68 (.695 -1.090) 15.50 - 16.53 (.610 - .650) 8.50 - 11.00 (.335 - .433) 0.00 - 0.50 (0.00 - .020) 8.50 - 9.75 (.335 - .384) 5.50 - 19.00 (.217 - .748) 17.50 - 19.00 (.689 - .748) tisp4xxxh3lm overvoltage protector series ?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries.

▲Up To Search▲

Price & Availability of TISP4115H3

	To Download TISP4115H3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .